Last edited by Mole
Wednesday, July 29, 2020 | History

2 edition of Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting found in the catalog.

Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting

Bipolar/BiCMOS Circuits and Technology Meeting (1994 Minneapolis, Minn.)

Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting

by Bipolar/BiCMOS Circuits and Technology Meeting (1994 Minneapolis, Minn.)

  • 349 Want to read
  • 14 Currently reading

Published by IEEE Order Dept. in Piscataway, NJ .
Written in English

    Subjects:
  • Bipolar integrated circuits -- Congresses.,
  • Bipolar transistors -- Congresses.,
  • Metal oxide semiconductors, Complementary -- Congresses.

  • Edition Notes

    Other titles1994 IEEE Bipolar/BiCMOS Circuits and Technology Meeting
    Statementsponsored by IEEE Electron Devices Society in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section ; edited by C. R. Selvakumar.
    ContributionsSelvakumar, C. R., IEEE Electron Devices Society., IEEE Circuits and Systems Society., Institute of Electrical and Electronics Engineers. Twin Cities Section.
    Classifications
    LC ClassificationsTK7874 .B56 1994
    The Physical Object
    Pagination248 p. :
    Number of Pages248
    ID Numbers
    Open LibraryOL19815555M
    ISBN 100780321170, 0780321189, 0780321197

    Modelling two SiGe HBT specific features for circuit simulation - Bipola r/BiCMOS Circuits and Technology Meeting, Proceedings of the Created Date 10/10/ PM. W. Veit et al, “A V MHz GHz Transceiver Chipset for Mobile Radio Applications in 25 GHz ft Si-Bipolar”, Bipolar/BiCMOS Circuits and Technology Meeting. Google Scholar [5]Cited by:

    We discuss the physical basis, experimental results, and compact circuit modeling issues associated with neutral base recombination, germanium-ramp effects, and high-injection heterojunction barrie Author: John D. Cressler, Alvin J. Joseph, Stacey L. Salmon, David L. Harame. Advancements in semiconductor technology have led to a steady increase in the unity power gain frequency (f max) of silicon transistors, both in CMOS and SiGe BiCMOS , in turn, enables realization of complex monolithic silicon integrated circuits operating at the millimeter-wave (mm-wave) frequency range (typically defined as 30– GHz).

    in the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, October , pp After careful and considered review, it has been determined that the above paper is in violation of IEEE's Publication Principles. Specifically, the coauthor??s name . IEEE Bipolar/BiCMOS Circuits and Technology Meeting Digest Viewgraphs. THz devices: European GaAs Conference Digest. mm-wave instrumentation using GaAs nonlinear transmission lines Cornell Conference on High-Speed Devices. Digest. Selected Invited Papers.


Share this book
You might also like
2 essays

2 essays

Marriage as an instrument of oppression in aboriginal communities

Marriage as an instrument of oppression in aboriginal communities

statutes at large concerning elections of members to serve in the House of Commons

statutes at large concerning elections of members to serve in the House of Commons

Fauvist painters.

Fauvist painters.

Controlling pollution at sea.

Controlling pollution at sea.

Morality of fiction

Morality of fiction

Luyties Homeopathic Practice

Luyties Homeopathic Practice

Napoleonic wargame

Napoleonic wargame

Portrayals of revolution

Portrayals of revolution

Text-book of comparative anatomy

Text-book of comparative anatomy

Development, trade, and HIV/AIDS

Development, trade, and HIV/AIDS

Interocean 70.

Interocean 70.

The twenty years crisis, 1919-1939.

The twenty years crisis, 1919-1939.

Proceedings of the 1994 Bipolar/BiCMOS Circuits and Technology Meeting by Bipolar/BiCMOS Circuits and Technology Meeting (1994 Minneapolis, Minn.) Download PDF EPUB FB2

Bipolar/BiCMOS Circuits and Technology Meeting ( Minneapolis, Minn.). Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. New York, NY: IEEE ; Piscataway, NJ: Additional copies may be ordered from IEEE Order Dept., © (OCoLC) Material Type: Conference publication, Internet resource: Document Type.

Bipolar/BiCMOS Circuits and Technology Meeting, proceedings of the Responsibility: sponsored by IEEE Electron Devices Society in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section ; edited by C.R. Selvakumar. Advanced Modelling Of Distortion Effects In Bipolar Transistors Using Th e Mextram Model - Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the Author: IEEE Created Date: 1/16/ PM.

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting. Country: United States - SIR Electrical and Electronic Engineering: Publisher: Publication type: Conferences and Proceedings: ISSN:, Coverage:ongoing: Homepage. Join the conversation about this journal: SJR The SJR is a size.

Bipolar/BiCMOS Circuits and Technology Meeting,proceedings of the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting IEEE Bipolar/BiCMOS Circuits and Technology Meeting: Responsibility: sponsored by IEEE Electron Devices Society, in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section.

Get this from a library. Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting. [Janice Jopke; IEEE Electron Devices Society.; IEEE Circuits and Systems Society.; Institute of Electrical and Electronics Engineers. Twin Cities Section.;].

A universal BiCMOS low-voltage-swing transceiver (driver/receiver) with low on-chip power consumption is reported. Using a V supply, the novel transceiver can drive/receive signals from several low-voltage-swing transceivers with termination voltages ranging from 5 V down to 2 V and frequencies well above 1 GHz.

Measured results of test circuits fabricated in /spl mu/m BiCMOS. Title IEEE Bipolar/BiCMOS Circuits and Technology Meeting Desc:Proceedings of a meeting held OctoberMonterey, California.

Prod#:CFP08BIP-CDR ISBN Pages:0 Format:CD-ROM Notes: Authorized distributor of all IEEE proceedings Publ:Institute of Electrical and Electronics Engineers (IEEE) POD Publ:Curran Associates, Inc. (Jan ). The following topics are dealt with:wireless transceivers and building blocks; terahertz transistors; SiGe complementary BiCMOS; data converters and oscillators ; large-signal bipolar modeling; power devices; DBS tuner and power amplifiers; data transceivers; thermal effects, modeling, and reliability; radar and wireless sensors; bipolar modeling and characterization; SiGe millimeter wave and.

This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies that previously supported BVceo values up to 6V.

The bipolar architecture is nearly identical with that used in the lower voltage technologies. The complementary bipolar transistors are paired with 5V CMOS currently. Bipolar/BiCMOS Circuits and Technology Meeting,proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting IEEE Bipolar Circuits and Technology Meeting: Responsibility: sponsored by IEEE Electron Devices Society in cooperation with IEEE Circuits and Systems Society, IEEE Twin Cities Section ; edited by Janice.

It is with great pleasure that we invite you to be a part of the IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). After 39 years of the Compound Semiconductor IC Symposium (CSICS), and 32 years of the Bipolar/BiCMOS Circuit and Technology Meeting (BCTM), and after a successful debut in San Diego.

Proceedings of the Bipolar/Bicmos Circuits and Technology Meeting [Bipolar/BiCMOS Circuits and Technology Meeting ( Minneapolis, Minn.)] on *FREE* shipping on qualifying offers. Proceedings of the Bipolar/Bicmos Circuits and Technology MeetingAuthor: Minn.) BipolarBiCMOS Circuits and Technology Meeting ( Minneapolis.

Best Student Paper Award, U. Raghunathan, P. Chakraborty, B. Wier, J. Cressler, H. Yasuda, and P. Menz, “TCAD Modeling of Accumulated Damage During Time-Dependent Mixed-Mode Stress,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.

; Best Paper Award, A. Goyal, M. Swaminathan, A. Chatterjee, D. Howard, and J.D. Cressler, “A. ??A BiCMOS SiGe Direct-Conversion DBS Satellite TV Tuner with on-chip ADCs for SiP Integration with a CMOS Demodulator-on-Host?.

by A. Maxim, in the Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, BCTM ' IEEE Sept. 30 Oct. 2 Page(s) In this chapter we consider the evolution of CMOS towards bipolar-compatible CMOS or BiCMOS technology. The possibility of developing BiCMOS is attractive because a number of performance improvements are possible.

Namely, the bipolar device offers current driving, device matching, and threshold control superior to MOS. J.D. Cressler, "Using SiGe HBTs for Extreme Environment Electronics,” Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.

J.D. Cressler, “Emerging Reliability Issues for SiGe HBTs for Mixed-Signal Circuit Applications,” IEEE Transactions on Device and Materials Reliability, vol. 4, pp. BiCMOS which combines CMOS and bipolar circuits for high performance together with high density and low power has been recognised to be the emerging silicon technology.

Abstract. Performance capability of circuits depends to a great extent on the available semiconductor technology. Numerous parameters related to device, metallization or substrate properties circumscribe the achievable circuit characteristics at microwave frequencies and thus can be used for technology : Vadim Issakov.

van Noort WD, Rodriguez A, HongJiang S, Zaato F, Zhang N, Nesheiwat T et al. BiCMOS technology improvements for microwave application. In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, (BCTM ) by:. ieee bipolar / bicmos circuits and technology meeting radisson hotel & suites austin, texas, usa october 5 – 6, short course — october 4, sponsored by the electron devices society of the institute of electrical and electronic engineers in cooperation with the ieee solid-state circuits society.

A 40 volt silicon complementary bipolar technology for high-precision and high-frequency analog circuits, in Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,IEEE,pp. –Cited by: 1.We present predictive and accurate modeling of base and collector currents in poly‐Si emitter bipolar transistors Ref.

Using a standard μm bipolar complementary metal–oxide–semiconductor technology process flow Ref., numerous experiments are performed. The base and emitter doping profiles are varied intentionally over a wide range in a controlled manner, so as to extract a self Cited by: 3.